
NXP Semiconductors
PESD5Zx series
Low capacitance unidirectional ESD protection diodes
250
C d
(pF)
200
150
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100
C d
(pF)
80
60
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(1)
100
(2)
40
(1)
(2)
50
0
(3)
20
0
(3)
0
1
2
3
4
5
0
4
8
12
V R (V)
f = 1 MHz; T amb = 25 ° C
(1) PESD5Z2.5
(2) PESD5Z3.3
(3) PESD5Z5.0
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
V R (V)
f = 1 MHz; T amb = 25 ° C
(1) PESD5Z6.0
(2) PESD5Z7.0
(3) PESD5Z12
Fig 6. Diode capacitance as a function of reverse
voltage; typical values
I
10
I R
I R(25 ° C)
006aab059
1
? V CL ? V BR ? V RWM
?
P-N
+
? I RM
? I R
V
10 ? 1
? 100
? 50
0
50
100
T j ( ° C)
150
? I PP
006aaa407
PESD5Z2.5; V RWM = 2.5 V
PESD5Z3.3; V RWM = 3.3 V
I R is less than 50 nA at 150 ° C for:
PESD5Z5.0; V RWM = 5.0 V
PESD5Z6.0; V RWM = 6.0 V
PESD5Z7.0; V RWM = 7.0 V
PESD5Z12; V RWM = 12.0 V
Fig 7. Relative variation of reverse current as a
function of junction temperature; typical values
PESD5ZX_SER_2
Fig 8. V-I characteristics for a unidirectional
ESD protection diode
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
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